Time‐resolved photoluminescence of Al‐rich AlGaN/AlN quantum wells under selective excitation

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<jats:title>Abstract</jats:title><jats:p>We performed time‐resolved photoluminescence (TRPL) measurements for high‐quality Al‐rich AlGaN/AlN multiple quantum wells (MQWs) under selective excitation condition in order to investigate carrier recombination dynamics around the Mott transition. Fast and slow lifetime components (12 ps and 210 ps) were definitely observed under high excitation conditions at 5.5 K and were attributed to electron‐hole plasma and the exciton many‐body effect, respectively. It was found that the remarkable difference in the radiative lifetimes caused strongly excitation‐power dependent internal quantum efficiencies. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

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