Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals

DOI Web Site 被引用文献20件 参考文献49件
  • Keita Nomoto
    School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia
  • Hiroshi Sugimoto
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe, 657-8501, Japan
  • Andrew Breen
    Australian Centre for Microscopy and Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia
  • Anna V. Ceguerra
    Australian Centre for Microscopy and Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia
  • Takashi Kanno
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe, 657-8501, Japan
  • Simon P. Ringer
    Australian Institute for Nanoscale Science and Technology, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia
  • Ivan Perez Wurfl
    School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia
  • Gavin Conibeer
    School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia
  • Minoru Fujii
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe, 657-8501, Japan

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説明

Silicon nanocrystals (Si NCs) are intensively studied for optoelectronic and biological applications due to having highly attractive features such as band engineering. Although doping is often used to control the optical and electrical properties, the related structural properties of solely doped and codoped Si NCs are not well-understood. In this study, we report the boron (B) and/or phosphorus (P) distribution in Si NCs embedded in borosilicate glass (BSG), phosphosilicate glass (PSG), and borophosphosilicate glass (BPSG) using atom probe tomography (APT). We compared solely and codoped Si NCs grown at different temperatures so that we may compare the effects of codoping and temperature on the B and/or P distribution. Proximity histograms and cluster analyses reveal that there exist boron-rich layers surrounding Si NCs and also B–P clusters within the Si NCs. Raman spectra also show a structural change between codoped Si NCs in solids and free-standing codoped Si NCs. These results lead us to understand...

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