Electric field effect on magnetism in a MgO/Pd/Co system with a solid-state capacitor structure

DOI PDF 被引用文献2件 参考文献38件 オープンアクセス
  • Aya Obinata
    Department of Applied Physics, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
  • Takamasa Hirai
    Department of Applied Physics, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
  • Yoshinori Kotani
    Japan Synchrotron Radiation Research Institute 2 , SPring-8, Sayo, Hyogo 679-5198, Japan
  • Kentaro Toyoki
    Japan Synchrotron Radiation Research Institute 2 , SPring-8, Sayo, Hyogo 679-5198, Japan
  • Tetsuya Nakamura
    Japan Synchrotron Radiation Research Institute 2 , SPring-8, Sayo, Hyogo 679-5198, Japan
  • Tomohiro Koyama
    Department of Applied Physics, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
  • Daichi Chiba
    Department of Applied Physics, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan

説明

<jats:p>The electric field effect on the magnetism in a MgO/Pd/Co system, in which a magnetic moment is induced in the Pd layer owing to the ferromagnetic proximity effect, has been investigated using various experimental methods. An electric field was applied to the surface of the Pd layer through a solid-state HfO2/MgO dielectric bilayer by applying a gate voltage with a back-gating configuration. Changes in the magnetic properties of the system as a result of gate voltage application were detected using magnetization and polar-Kerr effect measurements as well as X-ray absorption and X-ray magnetic circular dichroism (XMCD) spectroscopies. A systematic change in the magnetic moment of the system by the application of a gate voltage is observed. The magnetic hysteresis loops obtained by the polar-Kerr effect measurement and the element-specific XMCD signal at the Co L3-edge clearly show a reproducible change in the coercivity that is dependent on the gate voltage.</jats:p>

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  • AIP Advances

    AIP Advances 8 (11), 115122-, 2018-11-01

    AIP Publishing

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