Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface

DOI DOI PDF 被引用文献1件 参考文献30件
  • Yusai Wakafuji
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Rai Moriya
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Sabin Park
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Kei Kinoshita
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Satoru Masubuchi
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
  • Kenji Watanabe
    National Institute for Materials Science 2 , 1-1 Namiki, Tsukuba 305-0044, Japan
  • Takashi Taniguchi
    National Institute for Materials Science 2 , 1-1 Namiki, Tsukuba 305-0044, Japan
  • Tomoki Machida
    Institute of Industrial Science, University of Tokyo 1 , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

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<jats:p>We demonstrate the detection of cyclotron resonance in graphene by a photo-induced thermionic emission mechanism at the graphene/MoS2 van der Waals (vdW) Schottky junction. At cyclotron resonance in Landau-quantized graphene, the infrared light is absorbed, and an electron–hole pair is generated. When the energy of a photoexcited electron exceeds the band offset energy at the graphene/MoS2 interface, the electron transfer occurs from graphene to the conduction band of MoS2, and the hole remains in graphene. This creates an electron–hole separation at the graphene/MoS2 interface at cyclotron resonance, and a photovoltage is generated. The proposed method is an infrared photodetection technique through out-of-plane transport at the vdW junction, which is distinct from the previously reported methods that use in-plane transport in graphene for electronic detection of the cyclotron resonance. Despite the simple structure of our device with a single-vdW junction, our method exhibits a very high sensitivity of ∼106 V/W, which shows an improvement of three orders of magnitude over the previously reported values. Therefore, the proposed method displays a high potential for cyclotron resonance-based infrared photodetector applications.</jats:p>

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