Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing

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<jats:p>We have investigated an impact of thermal annealing in N<jats:sub>2</jats:sub> ambience on crystallization of a Ge thin layer with a thickness below 10 nm formed on Sapphire substrate. A SiO<jats:sub>2</jats:sub>/Ge/Sapphire(0001) structure was prepared by RF sputtering of a Ge thin layer and ALD of a SiO<jats:sub>2</jats:sub> capping layer. From the Raman scattering spectroscopy and AFM analyses of the SiO<jats:sub>2</jats:sub>/Ge/Sapphire(0001) structure before and after the annealing at the temperature in the range from 600°C to 900°C, crystallization of the Ge thin layer and change in the surface morphology has been discussed. And, two-step annealing was found to be effective to grow the Ge crystal layer with keeping surface flatness.</jats:p>

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  • ECS Transactions

    ECS Transactions 98 (5), 505-511, 2020-09-08

    The Electrochemical Society

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