Comparison of deep silicon etching using SF6/C4F8 and SF6/C4F6 plasmas in the Bosch process
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- Hyongmoo Rhee
- Ajou University Department of Chemical Engineering, Division of Energy Systems Research, , San 5, Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea
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- Hyeokkyu Kwon
- Ajou University Department of Chemical Engineering, Division of Energy Systems Research, , San 5, Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea
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- Chang-Koo Kim
- Ajou University Department of Chemical Engineering, Division of Energy Systems Research, , San 5, Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea
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- HyunJung Kim
- Ajou University Department of Mechanical Engineering, , San 5, Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea
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- Jaisuk Yoo
- Ajou University Department of Mechanical Engineering, , San 5, Woncheon-dong, Yeongtong-gu, Suwon 443-749, Korea
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- Yil Wook Kim
- Eugene Technology Co., Ltd. , 209-3, Chuge-ri, Yangji-myun, Yongin, Gyeonggi-do 449-824, Korea
書誌事項
- 公開日
- 2008-03-01
- DOI
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- 10.1116/1.2884763
- 公開者
- American Vacuum Society
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説明
<jats:p>Silicon was etched with the Bosch process using C4F8 and C4F6 plasmas in the deposition step to show a feasibility of the use of UFC plasmas in the Bosch process. The use of C4F8 and C4F6 plasmas resulted in different characteristics of fluorocarbon films and radicals, affecting the etch profiles. It was shown that the use of a C4F6 plasma in the deposition step of the Bosch process produced thicker and more strongly bonded fluorocarbon films, compared to a C4F8 plasma. It was because more CF2 radicals and lower F/C ratio fluorocarbon films were generated in C4F6 plasmas than those in C4F8 plasmas, confirmed by OES and XPS measurements. By changing only the duration of the deposition step under the same process conditions, highly anisotropic deep etching of silicon was successfully achieved using both SF6/C4F8 and SF6/C4F6 plasmas in the etching and/deposition steps of the Bosch process.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26 (2), 576-581, 2008-03-01
American Vacuum Society