High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

Details 詳細情報について

• CRID

  1360574093706001664

• DOI

  10.1109/3.644109

• ISSN

  00189197

• Web Site

  http://xplorestaging.ieee.org/ielx3/3/14053/00644109.pdf?arnumber=644109

• Data Source

  • Crossref