Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction
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説明
The six lattice parameters (a, b, c, alpha, beta and gamma) of Si(1-x)Ge(x), which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si(1-x)Ge(x) varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.
収録刊行物
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- Journal of Electron Microscopy
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Journal of Electron Microscopy 53 (6), 593-600, 2004-12-01
Oxford University Press (OUP)
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詳細情報 詳細情報について
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- CRID
- 1360574093824565760
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- NII論文ID
- 10014320462
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- NII書誌ID
- AA00697060
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- ISSN
- 14779986
- 00220744
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- PubMed
- 15582972
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