Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

詳細情報 詳細情報について

• CRID

  1360574094342400896

• DOI

  10.1186/s11671-018-2587-1

• ISSN

  1556276X

  19317573

• Web Site

  http://link.springer.com/content/pdf/10.1186/s11671-018-2587-1.pdf

  http://link.springer.com/article/10.1186/s11671-018-2587-1/fulltext.html

• データソース種別

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