Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector

  • L. Zeng
    Massachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA
  • P. Bermel
    Massachusetts Institute of Technology 2 Department of Physics, , Cambridge, Massachusetts 02139, USA
  • Y. Yi
    Massachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA
  • B. A. Alamariu
    Massachusetts Institute of Technology 3 Microsystems Technology Laboratories, , Cambridge, Massachusetts 02139, USA
  • K. A. Broderick
    Massachusetts Institute of Technology 3 Microsystems Technology Laboratories, , Cambridge, Massachusetts 02139, USA
  • J. Liu
    Massachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA
  • C. Hong
    Massachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA
  • X. Duan
    Massachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA
  • J. Joannopoulos
    Massachusetts Institute of Technology 2 Department of Physics, , Cambridge, Massachusetts 02139, USA
  • L. C. Kimerling
    Massachusetts Institute of Technology 1 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA

説明

<jats:p>Herein the authors report the experimental application of a powerful light trapping scheme, the textured photonic crystal (TPC) backside reflector, to thin film Si solar cells. TPC combines a one-dimensional photonic crystal as a distributed Bragg reflector with a diffraction grating. Light absorption is strongly enhanced by high reflectivity and large angle diffraction, as designed with scattering matrix analysis. 5 μm thick monocrystalline thin film Si solar cells integrated with TPC were fabricated through an active layer transfer technique. Measured short circuit current density Jsc was increased by 19%, compared to a theoretical prediction of 28%.</jats:p>

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