Calculated elastic constants for stress problems associated with semiconductor devices

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<jats:p>Theoretical estimates or experimental determinations of stress fields associated with semiconductor devices are generally simplified with the aid of two elastic constants, Young's modulus E and Poisson's ratio ν. In this paper, a generalized expression for ν has been derived for arbitrary orientations of cubic semiconductor crystals, and the variation of E, ν, and E/(1-ν) for directions within the important {111}, {100}, and {110} planes is examined. The results show that isotropic elasticity theory is exact for all directions within {111} planes and that the composite elastic constant E/(1-ν) which frequently occurs in problems of practical interest is also invariant for all directions within {100} planes. Numerical values for the various elastic constants are tabulated for GaAs, GaP, Si, and Ge.</jats:p>

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