Unpinned (100) GaAs surfaces in air using photochemistry

DOI PDF 被引用文献23件
  • S. D. Offsey
    IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
  • J. M. Woodall
    IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
  • A. C. Warren
    IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
  • P. D. Kirchner
    IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
  • T. I. Chappell
    IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
  • G. D. Pettit
    IBM Thomas J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598

書誌事項

公開日
1986-02-17
DOI
  • 10.1063/1.96535
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We have unpinned the Fermi level at the surface of both n- and p-type (100) GaAs in air. Light-induced photochemistry between GaAs and water unpins the surface Fermi level by reducing the surface state density. Excitation photoluminescence spectroscopy shows a substantial decrease in both surface band bending and surface recombination velocity in treated samples, consistent with a greatly reduced surface state density (≂1011 cm−2). Capacitance-voltage measurements on metal-insulator-semiconductor structures corroborate this reduction in surface state density and show that the band bending may be controlled externally, indicating an unpinned Fermi level at the insulator/GaAs interface. We discuss a possible unpinning mechanism.</jats:p>

収録刊行物

被引用文献 (23)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ