Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells

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  • Jan Keller
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden
  • Francis Chalvet
    Solibro Research AB Vallvägen 5 75151 Uppsala Sweden
  • Jonathan Joel
    Solibro Research AB Vallvägen 5 75151 Uppsala Sweden
  • Asim Aijaz
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden
  • Tomas Kubart
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden
  • Lars Riekehr
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden
  • Marika Edoff
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden
  • Lars Stolt
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden
  • Tobias Törndahl
    Ångström Solar Center, Division of Solid State Electronics Uppsala University PO Box 534 SE‐75121 Uppsala Sweden

Description

<jats:title>Abstract</jats:title><jats:p>This contribution studies the impact of the KF‐induced Cu(In,Ga)Se<jats:sub>2</jats:sub> (CIGSe) absorber modification on the suitability of different transparent conductive oxide (TCO) layers in solar cells. The TCO material was varied between ZnO:Al (AZO), ZnO:B (BZO), and In<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>:H (IOH). It is shown that the thermal stress needed for optimized TCO properties can establish a transport barrier for charge carriers, which results in severe losses in fill factor (<jats:italic>FF</jats:italic>) for temperatures >150°C. The <jats:italic>FF</jats:italic> losses are accompanied by a reduction in open circuit voltage (<jats:italic>V</jats:italic><jats:sub><jats:italic>oc</jats:italic></jats:sub>) that might originate from a decreased apparent doping density (<jats:italic>N</jats:italic><jats:sub>d,app</jats:sub>) after annealing. Thermally activated redistributions of K and Na in the vicinity of the CdS/(Cu,K)‐In‐Se interface are suggested to be the reason for the observed degradation in solar cell performance. The highest efficiency was measured for a solar cell where the absorber surface modification was removed and a BZO TCO layer was deposited at a temperature of 165°C. The presented results highlight the importance of well‐designed TCO and buffer layer processes for CIGSe solar cells when a KF post deposition treatment (KF‐PDT) was applied.</jats:p>

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