Comparative Raman studies of cubic and hexagonal GaN epitaxial layers

DOI PDF 被引用文献4件
  • A. Tabata
    Universidade de Sao Paulo, Instituto de Física CP 66318, 05389-970, Sao Paulo, Sao Paulo, Brazil
  • R. Enderlein
    Universidade de Sao Paulo, Instituto de Física CP 66318, 05389-970, Sao Paulo, Sao Paulo, Brazil
  • J. R. Leite
    Universidade de Sao Paulo, Instituto de Física CP 66318, 05389-970, Sao Paulo, Sao Paulo, Brazil
  • S. W. da Silva
    Departemento de Física, Universidade Federal de Sao Carlos, 13565-905, Sao Carlos, Sao Paulo, Brazil
  • J. C. Galzerani
    Departemento de Física, Universidade Federal de Sao Carlos, 13565-905, Sao Carlos, Sao Paulo, Brazil
  • D. Schikora
    Universität/GH Paderborn, FB 6 Physik, Warburger Str. 100, 33098 Paderborn, Germany
  • M. Kloidt
    Universität/GH Paderborn, FB 6 Physik, Warburger Str. 100, 33098 Paderborn, Germany
  • K. Lischka
    Universität/GH Paderborn, FB 6 Physik, Warburger Str. 100, 33098 Paderborn, Germany

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<jats:p>Hexagonal and cubic GaN layers are grown on (001) GaAs substrates by means of molecular beam epitaxy. First order Raman spectra are taken from these layers at various incident laser wavelengths and temperatures. The T2 transverse-optical (TO) and longitudinal-optical (LO) frequencies of cubic GaN are determined, as well as the A1 TO and LO, E1 TO, and E2 frequencies of hexagonal GaN. The T2 TO frequency of cubic GaN lies between the A1 and E1 TO frequencies of hexagonal GaN as one expects comparing the lattice dynamics of zincblende and wurtzite type crystals. The T2 TO frequency is close to the calculated value but disagrees with a recently reported experimental value. For the hexagonal layer, all frequencies are close to those previously measured. A broad Raman structure below the A1 LO peak is interpreted in terms of a disturbed long range order of the hexagonal layer.</jats:p>

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