Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl<sub>3</sub> and NH<sub>3</sub>

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<jats:title>Abstract</jats:title><jats:p>A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl<jats:sub>3</jats:sub> and NH<jats:sub>3</jats:sub> was performed. Regardless of the carrier gas used, partial pressures of Al‐containing gaseous species [AlCl<jats:sub>3</jats:sub>, AlCl<jats:sub>2</jats:sub>, AlCl and (AlCl<jats:sub>3</jats:sub>)<jats:sub>2</jats:sub>] in equilibrium with AlN are significantly low in the temperature range of 500–1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (Δ<jats:italic>P</jats:italic><jats:sub>Al</jats:sub>) becomes almost equal to the input partial pressure of AlCl<jats:sub>3</jats:sub>, which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

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