Flexible Quasi‐2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection

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  • Shali Wei
    Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China
  • Fang Wang
    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200000 China
  • Xuming Zou
    Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China
  • Liming Wang
    Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China
  • Chang Liu
    Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China
  • Xingqiang Liu
    Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China
  • Weida Hu
    State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200000 China
  • Zhiyong Fan
    Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Hong Kong SAR 999077 China
  • Johnny C. Ho
    Department of Materials Science and Engineering City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong SAR 999077 China
  • Lei Liao
    Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China

説明

<jats:title>Abstract</jats:title><jats:p>Organic–inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum‐well feature of two‐dimensional (2D) Ruddlesden–Popper PVKs (2D PVKs), a promising quasi‐2D PVK/indium gallium zinc oxide (IGZO) heterostructure phototransistor can be designed. By using a simple ligand‐exchange spin‐coating method, quasi‐2D PVK fabricated on flexible substrates exhibits a desirable type‐II energy band alignment, which facilitates effective spatial separation of photoexcited carriers. The device exhibits excellent photoresponsivity values of >10<jats:sup>5</jats:sup> A W<jats:sup>−1</jats:sup> at 457 nm, and broadband photoresponse (457–1064 nm). By operating the device in the depletion regime, the specific detectivity is found to be 5.1 × 10<jats:sup>16</jats:sup> Jones, which is the record high value among all PVK‐based photodetectors reported to date. Due to the resistive hopping barrier in the quasi‐2D PVK, the device can also work as an optoelectronic memory for near‐infrared information storage. More importantly, the easy manufacturing process is highly beneficial, enabling large‐scale and uniform quasi‐2D PVK/IGZO hybrid films for detector arrays with outstanding ambient and operation stabilities. All these findings demonstrate the device architecture here provides a rational avenue to the design of next‐generation flexible photodetectors with unprecedented sensitivity.</jats:p>

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