Electrical and structural analysis of high-dose Si implantation in GaN

DOI PDF 被引用文献6件
  • J. C. Zolper
    Sandia National Laboratories, Albuquerque, New Mexico 87185-0603
  • H. H. Tan
    Department of Electronic Materials and Engineering, Research School of Physical Sciences and Engineering, The Australian National, Canberra ACT 0200, Australia
  • J. S. Williams
    Department of Electronic Materials and Engineering, Research School of Physical Sciences and Engineering, The Australian National, Canberra ACT 0200, Australia
  • J. Zou
    Electron Microscope Unit and Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia
  • D. J. H. Cockayne
    Electron Microscope Unit and Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006, Australia
  • S. J. Pearton
    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
  • M. Hagerott Crawford
    Sandia National Laboratories, Albuquerque, New Mexico 87185-0601
  • R. F. Karlicek
    EMCORE Corporation, Somerset, New Jersey 08873

書誌事項

公開日
1997-05-19
DOI
  • 10.1063/1.119254
公開者
AIP Publishing

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説明

<jats:p>For the development of ion implantation processes for GaN to advanced devices, it is important to understand the dose dependence of impurity activation along with implantation-induced damage generation and removal. We find that Si implantation in GaN can achieve 50% activation at a dose of 1×1016 cm−2, despite significant residual damage after the 1100 °C activation anneal. The possibility that the generated free carriers are due to implantation damage alone and not Si-donor activation is ruled out by comparing the Si results to those for implantation of the neutral species Ar. Ion channeling and cross-sectional transmission electron microscopy are used to characterize the implantation-induced damage both as implanted and after a 1100 °C anneal. Both techniques confirm that significant damage remains after the anneal, which suggests that activation of implanted Si donors in GaN doses not require complete damage removal. However, an improved annealing process may be needed to further optimize the transport properties of implanted regions in GaN.</jats:p>

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