Detection and analysis of early failures in electromigration

DOI PDF 被引用文献1件
  • M. Gall
    Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
  • C. Capasso
    Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
  • D. Jawarani
    Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
  • R. Hernandez
    Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
  • H. Kawasaki
    Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
  • P. S. Ho
    Center for Materials Science and Engineering, PRC/MER, Mail Code R8650, The University of Texas at Austin, Austin, Texas 78712

書誌事項

公開日
2000-02-14
DOI
  • 10.1063/1.125603
公開者
AIP Publishing

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説明

<jats:p>The early failure issue in electromigration (EM) has been an unresolved subject of study over the last several decades. A satisfying experimental approach for the detection and analysis of early failures has not been established yet. In this study, a technique utilizing large interconnect arrays in conjunction with the well-known Wheatstone Bridge is presented. A total of more than 20 000 interconnects were tested. The results indicate that the EM failure mechanism studied here follows lognormal behavior down to the four sigma level.</jats:p>

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