High‐<i>f</i><sub>max</sub> GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications

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書誌事項

公開日
2007-05-31
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/pssa.200674881
公開者
Wiley

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説明

<jats:title>Abstract</jats:title><jats:p>This paper discusses the technology of state‐of‐the‐art GaN high electron mobility transistors (GaN‐HEMTs) used for millimeter‐wave amplifiers. A high maximum frequency of oscillation (<jats:italic>f</jats:italic><jats:sub>max</jats:sub>) device with high breakdown voltage (<jats:italic>BV</jats:italic><jats:sub>gd</jats:sub>) was focused on to improve the gain and efficiency of a millimeter‐wave amplifier. In this study, we demonstrated a high<jats:italic> f</jats:italic><jats:sub>max</jats:sub> of 210 GHz with a <jats:italic>BV</jats:italic><jats:sub>gd</jats:sub> of over 100 V using a novel Y‐shaped Schottky‐gate and GaN‐cap structure, for the first time. The effect of the AlGaN layer and the device dimensions were investigated to obtain a highly reliable millimeter‐wave power amplifier. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>

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