Resonant hole localization and anomalous optical bowing in InGaN alloys

DOI PDF 被引用文献9件
  • L. Bellaiche
    Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701
  • T. Mattila
    National Renewable Energy Laboratory, Golden, Colorado 80401
  • L.-W. Wang
    National Renewable Energy Laboratory, Golden, Colorado 80401
  • S.-H. Wei
    National Renewable Energy Laboratory, Golden, Colorado 80401
  • A. Zunger
    National Renewable Energy Laboratory, Golden, Colorado 80401

書誌事項

公開日
1999-03-29
DOI
  • 10.1063/1.123687
公開者
AIP Publishing

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説明

<jats:p>Using large supercell empirical pseudopotential calculations, we show that alloying of GaN with In induces localization in the hole wave function, resonating within the valence band. This occurs even with perfectly homogeneous In distribution (i.e., no clustering). This unusual effect can explain simultaneously exciton localization and a large, composition-dependent band gap bowing coefficient in InGaN alloys. This is in contrast to conventional alloys such as InGaAs that show a small and nearly composition-independent bowing coefficient. We further predict that (i) the hole wave function localization dramatically affects the photoluminescence intensity in InGaN alloys and (ii) the optical properties of InGaN alloys depend strongly on the microscopic arrangement of In atoms.</jats:p>

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