Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition
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説明
Abstract We achieved rapid homoepitaxial growth of β-Ga2O3 thin films with smooth surfaces using a mist chemical vapor deposition (CVD) process. A smooth film was grown at a rate of 3.2 μm/h using a concentrated aqueous solution of the GaCl3 precursor. Homoepitaxial growth of a smooth (010) β-Ga2O3 thin film was achieved via mist CVD at 750 °C, and the growth of β-Ga2O3 in different orientations was not observed. The GaCl3 precursor was highly soluble in water and enabled the rapid growth of homoepitaxial β-Ga2O3 thin films with smooth surfaces.
収録刊行物
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- Materials Science in Semiconductor Processing
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Materials Science in Semiconductor Processing 128 105732-, 2021-06
Elsevier BV
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詳細情報 詳細情報について
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- CRID
- 1360576118734003328
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- ISSN
- 13698001
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- 資料種別
- journal article
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- データソース種別
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