Application of dichromated gelatin for dry developed lithographic techniques on GaAs
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- J. M. Villalvilla
- Departamento de Fı́sica Aplicada, Universidad de Alicante, E-03080 Alicante, Spain
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- J. A. Vallés-Abarca
- Departamento de Fı́sica Aplicada, Universidad de Alicante, E-03080 Alicante, Spain
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- J. A. Quintana
- Departamento de Fı́sica Aplicada, Universidad de Alicante, E-03080 Alicante, Spain
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- J. Crespo
- Departamento de Fı́sica Aplicada, Universidad de Alicante, E-03080 Alicante, Spain
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説明
<jats:p>Dichromated gelatin developed in an O2 plasma is used as a negative resist to transfer patterns onto GaAs. After reactive ion etching, the results show a 10:1 aspect ratio with no gelatin residue when 1 μm period structures are transferred.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17 (3), 1085-1086, 1999-05-01
American Vacuum Society
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詳細情報 詳細情報について
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- CRID
- 1360576121991533568
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- DOI
- 10.1116/1.590698
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- ISSN
- 15208567
- 10711023
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- データソース種別
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