Dissipative Kerr Solitons in a III‐V Microresonator

  • Gregory Moille
    Microsystems and Nanotechnology Division National Institute of Standards and Technology Gaithersburg MD USA
  • Lin Chang
    Department of Electrical and Computer Engineering University of California Santa Barbara CA USA
  • Weiqiang Xie
    Department of Electrical and Computer Engineering University of California Santa Barbara CA USA
  • Ashutosh Rao
    Microsystems and Nanotechnology Division National Institute of Standards and Technology Gaithersburg MD USA
  • Xiyuan Lu
    Microsystems and Nanotechnology Division National Institute of Standards and Technology Gaithersburg MD USA
  • Marcelo Davanço
    Microsystems and Nanotechnology Division National Institute of Standards and Technology Gaithersburg MD USA
  • John E. Bowers
    Department of Electrical and Computer Engineering University of California Santa Barbara CA USA
  • Kartik Srinivasan
    Microsystems and Nanotechnology Division National Institute of Standards and Technology Gaithersburg MD USA

説明

<jats:title>Abstract</jats:title><jats:p>Stable microresonator Kerr soliton frequency combs in a III‐V platform (AlGaAs on SiO<jats:sub>2</jats:sub>) are demonstrated through quenching of thermorefractive effects by cryogenic cooling to temperatures between 4 and 20 K. This cooling reduces the resonator's thermorefractive coefficient, whose room‐temperature value is an order of magnitude larger than that of other microcomb platforms like Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>, SiO<jats:sub>2</jats:sub>, and AlN, by more than two orders of magnitude, and makes soliton states adiabatically accessible. Realizing such phase‐stable soliton operation is critical for applications that fully exploit the ultra‐high effective nonlinearity and high optical quality factors exhibited by this platform.</jats:p>

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