Strong emission of THz radiation from GaAs microstructures on Si

DOI PDF 1 Citations
  • Inhee Maeng
    Advanced Photonics Research Institute, Gwangju Institute of Science and Technology 1 , Gwangju 611005, Republic of Korea
  • Gyuseok Lee
    Advanced Photonics Research Institute, Gwangju Institute of Science and Technology 1 , Gwangju 611005, Republic of Korea
  • Chul Kang
    Advanced Photonics Research Institute, Gwangju Institute of Science and Technology 1 , Gwangju 611005, Republic of Korea
  • Gun Wu Ju
    School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology 2 , Gwangju 61005, Republic of Korea
  • Kwangwook Park
    Korea Advanced NanoFab Center 3 , Suwon, Gyeonggi-do 16229, Republic of Korea
  • Seoung-Bum Son
    National Renewable Energy Laboratory 4 , Golden, CO 80401, United States
  • Yong-Tak Lee
    School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology 2 , Gwangju 61005, Republic of Korea
  • Chul-Sik Kee
    Advanced Photonics Research Institute, Gwangju Institute of Science and Technology 1 , Gwangju 611005, Republic of Korea

Description

<jats:p>Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. The presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.</jats:p>

Journal

  • AIP Advances

    AIP Advances 8 (12), 125027-, 2018-12-01

    AIP Publishing

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