Dithieno[3,2‐b:2′,3′‐d]pyrrole Cored p‐Type Semiconductors Enabling 20 % Efficiency Dopant‐Free Perovskite Solar Cells

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  • Jie Zhou
    School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
  • Xinxing Yin
    School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
  • Zihao Dong
    School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
  • Amjad Ali
    School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China
  • Zhaoning Song
    Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
  • Niraj Shrestha
    Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
  • Sandip Singh Bista
    Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
  • Qinye Bao
    Key Laboratory of Polar Materials and Devices Department of Optoelectronics East China Normal University Shanghai 200241 China
  • Randy J. Ellingson
    Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
  • Yanfa Yan
    Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization The University of Toledo Toledo OH 43606 USA
  • Weihua Tang
    School of Chemical Engineering Nanjing University and Science and Technology Nanjing 210094 China

Description

<jats:title>Abstract</jats:title><jats:p>Organic p‐type semiconductors with tunable structures offer great opportunities for hybrid perovskite solar cells (PVSCs). We report herein two dithieno[3,2‐b:2′,3′‐d]pyrrole (DTP) cored molecular semiconductors prepared through π‐conjugation extension and an N‐alkylation strategy. The as‐prepared conjugated molecules exhibit a highest occupied molecular orbital (HOMO) level of −4.82 eV and a hole mobility up to 2.16×10<jats:sup>−4</jats:sup> cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>. Together with excellent film‐forming and over 99 % photoluminescence quenching efficiency on perovskite, the DTP based semiconductors work efficiently as hole‐transporting materials (HTMs) for n‐i‐p structured PVSCs. Their dopant‐free MA<jats:sub>0.7</jats:sub>FA<jats:sub>0.3</jats:sub>PbI<jats:sub>2.85</jats:sub>Br<jats:sub>0.15</jats:sub> devices exhibit a power conversion efficiency over 20 %, representing one of the highest values for un‐doped molecular HTMs based PVSCs. This work demonstrates the great potential of using a DTP core in designing efficient semiconductors for dopant‐free PVSCs.</jats:p>

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