Miscibility gap calculation for Ga1−xInxNyAs1−y including strain effects

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Abstract A method including strain effects is introduced for calculating the miscibility gap of the GaxIn1−xNyAs1−y material system. The Gibbs free energy is computed using the delta lattice parameter model and the conventional solution model. The contribution caused by the strain energy due to the mismatch between substrate and epitaxial layer is added. The spinodal points can be calculated from this expression. The critical temperature above which the solid is metastable has been found to be increased due to strain effects. It is pointed out that the result of the calculation depends on the choice of substrate. The miscibility gaps for GaxIn1−xAs, GaNyAs1−y and GaxIn1−xNyAs1−y are evaluated by this method for a more realistic model of crystal growth.

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