Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

DOI PDF 被引用文献3件
  • Z. Pan
    P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • T. Miyamoto
    P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • D. Schlenker
    P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • S. Sato
    P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • F. Koyama
    P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • K. Iga
    P&I Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

説明

<jats:p>The low temperature growth of highly strained GaInNAs/GaAs quantum wells was investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine. We found that the incorporation behavior of indium in the strained GaInAs layers at low growth temperature was very different from that at high growth temperature. The N content dropped rapidly with increasing In content in the strained GaInNAs layer. It is pointed out that the V/III ratio is an important growth parameter for TBAs based MOCVD. The V/III ratio strongly affected both the photoluminescence intensity and the alloy composition of the GaInNAs.</jats:p>

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