Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations
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- D. J. Stirland
- Allen Clark Research Centre, Plessey Research (Caswell) Limited, Caswell, Towcester, Northants, NN12 8EQ, United Kingdom
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- M. R. Brozel
- Department of Electrical and Electronic Engineering, Trent Polytechnic, Burton Street, Nottingham NG1 4BU,United Kingdom
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- I. Grant
- Cambridge Instruments, Rustat Road, Cambridge CB1 3QH, United Kingdom
抄録
<jats:p>Regions of low dislocation density (∼5×102 cm−2) in 2-mm-thick {001} wafers from indium doped, liquid encapsulated Czochralski grown, 2-in-diam. GaAs ingots have been examined by transmission infrared microscopy. Discrete dislocations were located and identified by their etching behavior in the calibrated A/B etchant. Comparison of identical regions before and after etching showed that increased absorption at 1 μm occurred at the sites of each dislocation. The results demonstrate directly that enhancement of [EL2], the concentration of the deep donor level EL2, occurs at single dislocations.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 46 (11), 1066-1068, 1985-06-01
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360579819388942464
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- DOI
- 10.1063/1.95762
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- ISSN
- 10773118
- 00036951
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- データソース種別
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- Crossref