Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

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  • D. J. Stirland
    Allen Clark Research Centre, Plessey Research (Caswell) Limited, Caswell, Towcester, Northants, NN12 8EQ, United Kingdom
  • M. R. Brozel
    Department of Electrical and Electronic Engineering, Trent Polytechnic, Burton Street, Nottingham NG1 4BU,United Kingdom
  • I. Grant
    Cambridge Instruments, Rustat Road, Cambridge CB1 3QH, United Kingdom

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<jats:p>Regions of low dislocation density (∼5×102 cm−2) in 2-mm-thick {001} wafers from indium doped, liquid encapsulated Czochralski grown, 2-in-diam. GaAs ingots have been examined by transmission infrared microscopy. Discrete dislocations were located and identified by their etching behavior in the calibrated A/B etchant. Comparison of identical regions before and after etching showed that increased absorption at 1 μm occurred at the sites of each dislocation. The results demonstrate directly that enhancement of [EL2], the concentration of the deep donor level EL2, occurs at single dislocations.</jats:p>

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