Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

  • K. Shima
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 1 , Sendai 980-8577, Japan
  • R. Tanaka
    Advanced Technology Laboratory, Fuji Electric Co., Ltd. 2 , Hino, Tokyo 191-8502, Japan
  • S. Takashima
    Advanced Technology Laboratory, Fuji Electric Co., Ltd. 2 , Hino, Tokyo 191-8502, Japan
  • K. Ueno
    Advanced Technology Laboratory, Fuji Electric Co., Ltd. 2 , Hino, Tokyo 191-8502, Japan
  • M. Edo
    Advanced Technology Laboratory, Fuji Electric Co., Ltd. 2 , Hino, Tokyo 191-8502, Japan
  • K. Kojima
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 1 , Sendai 980-8577, Japan
  • A. Uedono
    Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba 3 , Tsukuba, Ibaraki 305-8573, Japan
  • S. Ishibashi
    Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology 4 , Tsukuba, Ibaraki 305-8568, Japan
  • S. F. Chichibu
    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University 1 , Sendai 980-8577, Japan

抄録

<jats:p>To accelerate the development of GaN power devices, reproducible fabrication of p-type GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area doping is preferred. In this Letter, the results of time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements on p-GaN fabricated by I/I are presented. The p-GaN samples of a 220-nm-deep box-shaped Mg concentration profile ([Mg] = 3×1018 cm−3) were fabricated by sequential I/I of Mg and N followed by atmospheric-pressure post-implantation annealing (PIA). During PIA, Mg redistribution was guided by N-I/I-induced vacancies. The intensities of PL peaks originating from Mg acceptors were increased by increasing the PIA temperature (Ta), indicating progressive activation of Mg and simultaneous decrease in the concentration of nonradiative recombination centers (NRCs). As a result, a record-long room-temperature PL lifetime for the near-band edge emission of Ga-polar Mg-implanted p-GaN (1.4 ps) was obtained when Ta = 1300 °C. Because the species of major vacancy-type defects in the present sample was determined as vacancy clusters comprised of few Ga-vacancies (VGa) and N-vacancies (VN) such as (VGaVN)2–3, the NRC concentration is roughly estimated at around 1017 cm−3 provided that (VGaVN)2–3 are major NRCs with the electron-capture-coefficient of 7×10−6 cm3 s−1. Cross-sectional CL linescan images revealed certain activation of Mg from the surface to the leading edge of the box-shaped [Mg] profile, while NRCs remained at the depths right below the box-shaped profile. The results support advantages of using the vacancy-guided Mg redistribution technique for controlling the activated [Mg] profile and realizing p-type Ga-polar GaN:Mg segments by I/I.</jats:p>

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