High-tone bulk acoustic resonators on sapphire, crystal quartz, fused silica, and silicon substrates
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- Hao Zhang
- University of Southern California Department of Electrical Engineering-Electrophysics, , Los Angeles, California 90089
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- Wei Pang
- University of Southern California Department of Electrical Engineering-Electrophysics, , Los Angeles, California 90089
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- Hongyu Yu
- University of Southern California Department of Electrical Engineering-Electrophysics, , Los Angeles, California 90089
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- Eun Sok Kim
- University of Southern California Department of Electrical Engineering-Electrophysics, , Los Angeles, California 90089
書誌事項
- 公開日
- 2006-06-15
- DOI
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- 10.1063/1.2209029
- 公開者
- AIP Publishing
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説明
<jats:p>High-tone bulk acoustic resonators (HBARs) have been fabricated on four types of substrates: c-axis sapphire, AT-cut crystal quartz, fused silica, and ⟨100⟩ single crystal silicon. Quality factors of the HBARs on the four substrates have been compared. Temperature effect on the Q and resonant frequency of the four types of HBARs has been investigated. This paper reports that acoustic absorption in fused silica decreases with increased temperature. Acoustic absorptions in the other three substrates increase with increased temperature. Also, temperature coefficients of frequency of HBARs on sapphire, crystal quartz, fused silica, and silicon have been investigated. Finally, acoustic velocities in the four substrates have been extracted by measuring the frequency difference between two successive resonances of the HBAR on the corresponding substrate, and their dependences on temperature have been investigated.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 99 (12), 124911-, 2006-06-15
AIP Publishing