Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films
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- Dujiao Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Feihong Wu
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Qi Ying
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Xinyu Gao
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Nan Li
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Kejing Wang
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Zongyou Yin
- Research School of Chemistry
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- Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment
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- Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment
Description
<p>A thickness-tunable, ultra-large, continuous and high-dielectric h-BN films, achieved by optimizing LPCVD growth parameters, exhibit highly promising perspectives to develop electrically reliable 2D microelectronics with an ultrathin feature.</p>
Journal
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- Journal of Materials Chemistry C
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Journal of Materials Chemistry C 7 (7), 1871-1879, 2019
Royal Society of Chemistry (RSC)
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Details 詳細情報について
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- CRID
- 1360580235490854784
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- ISSN
- 20507534
- 20507526
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- Data Source
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- Crossref