Active Ultrahigh‐<i>Q</i> (0.2 × 10<sup>6</sup>) THz Topological Cavities on a Chip
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- Abhishek Kumar
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
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- Manoj Gupta
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
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- Prakash Pitchappa
- Agency for Science, Technology and Research Institute of Microelectronics 2 Fusionopolis Way Singapore 138634 Singapore
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- Thomas Caiwei Tan
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
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- Udvas Chattopadhyay
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
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- Guillaume Ducournau
- Institut d'Electronique de Microelectronique et de Nanotechnologie (IEMN) UMR CNRS 8520 Universite de Lille 1 Villeneuve d'Ascq CEDEX 59652 France
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- Nan Wang
- Agency for Science, Technology and Research Institute of Microelectronics 2 Fusionopolis Way Singapore 138634 Singapore
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- Yidong Chong
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
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- Ranjan Singh
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
説明
<jats:title>Abstract</jats:title><jats:p>Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high‐speed and large‐volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low‐loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter‐/intrachip bandwidth density and energy‐efficiency bottleneck. Here, a low‐loss terahertz topological interconnect–cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh‐quality (<jats:italic>Q</jats:italic>) factor of 0.2 × 10<jats:sup>6</jats:sup>. The topologically protected large <jats:italic>Q</jats:italic> factor cavity enables energy‐efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect–cavity for on‐chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal–oxide–semiconductor (CMOS)‐compatible and highly desirable for hybrid electronic–photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh‐<jats:italic>Q</jats:italic> cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.</jats:p>
収録刊行物
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- Advanced Materials
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Advanced Materials 34 (27), 2202370-, 2022-05-29
Wiley