High-temperature efficient luminescence of dilute-nitride InGaAsN quantum dots with deep electron potential

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  • Ayano Morita
    Faculty of Information Science and Technology, Hokkaido University , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
  • Satoshi Hiura
    Faculty of Information Science and Technology, Hokkaido University , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
  • Junichi Takayama
    Faculty of Information Science and Technology, Hokkaido University , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
  • Akihiro Murayama
    Faculty of Information Science and Technology, Hokkaido University , Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan

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<jats:p>The temperature dependence of the optical properties of In0.4Ga0.6As0.98N0.02 quantum dots (QDs) was investigated using continuous-wave and time-resolved photoluminescence (PL). Significant increases in the PL peak energy and the PL linewidth were observed at temperatures above 200 K, which reflected the high luminescence efficiency of ground and excited states at high temperatures. The PL decay times of the ground state were almost constant between 200 and 300 K at 200–220 ps, which were significantly longer than that of 38 ps for the In0.4Ga0.6As QDs at 300 K. The temperature independence of the PL decay time represents significant suppression of the thermal escape and the thermal excitation of electrons because the electron ground-state localization energy is much larger than the thermal energy. The PL intensity of the In0.4Ga0.6As0.98N0.02 QDs was seven times stronger than that of the In0.4Ga0.6As QDs at 300 K, and this tendency was maintained up to 400 K with a PL intensity one order of magnitude stronger. These findings demonstrate that lowering the QD conduction band by nitrogen incorporation is an effective approach for achieving strong QD luminescence above room temperature.</jats:p>

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