Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Hiroshi Amano

doi:10.7567/apex.8.022702

Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

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説明

We demonstrated lasing action and investigated the optical properties of multiquantum-well (MQW) stripe crystals on patterned (001) Si substrates. Longitudinal and higher order transverse modes were observed from a ridge waveguide structure. These results strongly suggest the possibility of fabricating InGaN MQW laser diodes on (001) Si.

収録刊行物

Applied Physics Express

Applied Physics Express 8 (2), 022702-, 2015-01-29

IOP Publishing

Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

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説明

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Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

この論文をさがす

説明

収録刊行物

被引用文献 (8)*注記

参考文献 (17)*注記

関連プロジェクト

詳細情報 詳細情報について

書き出し

問題の指摘

詳細情報詳細情報について