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A Dopant Cluster in a Highly Antimony Doped Silicon Crystal
Bibliographic Information
- Published
- 2010-07-30
- DOI
-
- 10.1143/apex.3.081301
- Publisher
- IOP Publishing
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Description
A dopant cluster consisting of two antimony atoms facing each other in a six-member ring was found in the silicon crystals of a dopant concentration of 5×1020 cm-3, slightly above the critical value for generating electrically deactivated clusters. This cluster was detected with a 50-pm-resolution aberration corrected scanning transmission electron microscope. A large angle convergent beam, 30 mrad in semi-angle, yields section images with an improved depth of field of about 2 nm. The dopant clusters were discriminated from isolated antimony atoms by statistical analysis of image intensity. These clusters can cause electrical deactivation at critical dopant concentration.
Journal
-
- Applied Physics Express
-
Applied Physics Express 3 (8), 081301-, 2010-07-30
IOP Publishing
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Details 詳細情報について
-
- CRID
- 1360847871764902016
-
- NII Article ID
- 210000014744
-
- ISSN
- 18820786
- 18820778
-
- Data Source
-
- Crossref
- CiNii Articles
- OpenAIRE