Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures

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Abstract

<jats:p> The self-consistent variational technique is used to calculate the mobility of two-dimensional electrons at the hetero-in-terfaces in AlInAs/InGaAs and InP/InGaAs single heterostructures. The sheet electron concentration dependence of the total mobility and each-scattering-limited mobility are shown. The predominance of the alloy-scattering-limited mobility is demonstrated. Model calculation of the two-dimensional electron mobility in an alloy-scattering-free InAs/GaAs monolayer superlattice with AlInAs as the barrier is also presented. </jats:p>

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