CW Operation of 0.67 µm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE
説明
<jats:p> CW operation of GaInAsP/AlGaAs oxide stripe lasers with the stripe width of 8 µm was achieved at the heat-sink temperature of 208 K. The maximum light emission power and differential quantum efficiency obtained at room temperature pulse condition were 30 mW/facet and 46%, respectively. The characteristic temperature of threshold <jats:italic>T</jats:italic> <jats:sub>0</jats:sub> observed at the CW condition was 93 K at the tempeature of 113–200 K. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 24 (5A), L358-, 1985-05-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871768566656
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- NII論文ID
- 210000024185
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- ISSN
- 13474065
- 00214922
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- データソース種別
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