Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
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説明
<jats:p> AlAs/GaAs monolayer scale superlattices were grown by atmospheric pressure-MOCVD and the layer structure was observed with a transmission electron microscope (TEM). Clear stripes with high contrast in the TEM lattice image indicated ultra-abrupt hetero-interfaces. The TEM image and the transmission electron diffraction pattern of the superlattices showed that the hetero-interface was nearly free of island-like structure even in such a very short period superlattice as (AlAs)<jats:sub>5</jats:sub>-(GaAs)<jats:sub>2</jats:sub>. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 24 (2A), L85-, 1985-02-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871768635392
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- NII論文ID
- 210000024365
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- ISSN
- 13474065
- 00214922
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- データソース種別
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