Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>P<sub>1-y</sub> Alloy System

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<jats:p> The effect of alloy scattering on the electron and hole impact ionization rates, α and β in the Ga<jats:sub>1-<jats:italic>x</jats:italic> </jats:sub>In<jats:sub> <jats:italic>x</jats:italic> </jats:sub>As<jats:sub> <jats:italic>y</jats:italic> </jats:sub>P<jats:sub>1-<jats:italic>y</jats:italic> </jats:sub> alloy system lattice-matched to InP substrates is analyzed. A Monte Carlo simulation shows that the experimental α and β values in GaInAsP are very well explained by introducing alloy scattering, which greatly reduces α and β in the alloy system. This indicates that alloy scattering must be taken into account in estimating or deriving ionization rates in an alloy semiconductor. </jats:p>

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