Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
抄録
<jats:p> Temperature dependence of the electron mobility in modulation-doped InGaAs/InAlAs single heterostructures has been investigated by Hall effect measurements in the temperature range from 15 K to 300 K in order to clarify the scattering mechanisms of the electrons. Two kinds of samples are used with doping densities in the InAlAs barrier layer, <jats:italic>N</jats:italic> <jats:sub>D</jats:sub>=3×10<jats:sup>17</jats:sup> cm<jats:sup>-3</jats:sup> and 1×10<jats:sup>18</jats:sup> cm<jats:sup>-3</jats:sup>. The measured electron mobility is compared with the calculated values by taking into account the scattering by InAs-like and GaAs-like LO phonons in the InGaAs channel layer, in addition to the acoustic deformation potential, piezoelectric, ionized impurity, alloy disorder and interface roughness scatterings. The calculated electron mobility shows a good agreement with the experimental data when the alloy disorder potential is assumed to be about 0.7 eV. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 29 (10R), 2017-, 1990-10-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871770320256
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- NII論文ID
- 210000029006
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- ISSN
- 13474065
- 00214922
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- データソース種別
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