Optimization and Characterization of 780 nm AlGaAs Quantum Well DFB Laser Diodes
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説明
<jats:p> AlGaAs quantum well DFB laser diodes with a wavelength of 780 nm have been fabricated using two-step MOVPE growth and EB lithography. Comparing several quantum well structures emitting 780 nm wavelength, the optimum structure was determined to be about 5 nm thick with a 0.06 Al mole fraction where low threshold current and low internal loss are realized. The GRIN-SCH structure with a carrier blocking layer was also utilized to improve the characteristic temperature of a two-step-growth laser diode. The resulting threshold current, characteristic temperature and spectral linewidth are 11 mA, 244 K and 760 kHz, respectively. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 29 (10A), L1829-, 1990-10-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871770545536
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- NII論文ID
- 210000029651
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- ISSN
- 13474065
- 00214922
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- データソース種別
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