Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method

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説明

BP with the size of 50 µm to 3 mm was synthesized by the Cu flux method. The BP crystals have a zincblend structure, and the lattice constant and the cathodoluminescence peak wavelength were 4.557 A and 370 nm, respectively. GaN and AlN were grown by metalorganic chemical vapor deposition on BP. It was found that AlN grown at 1150 °C on (100)BP was grown smoothly but that grown on (111)BP had a rough surface. GaN, however, was irregularly grown on both (100) and (111)BP. It was demonstrated that AlN on (100)BP is another candidate as a substrate for a UV-light-emitting diode.

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