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Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb<sub>2</sub>Te Phase Change Material
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Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 (2R), 024102-, 2011-02-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360847874814893312
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- NII Article ID
- 210000138412
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
