Experimental study on SET/RESET conditions for graphene resistive random access memory
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説明
<jats:p>The switching conditions of graphene resistive random access memories (ReRAMs) are studied. Multi terminal devices are used to clarify the location of ReRAM operations. It is shown that a metal/graphene interface has no effect on ReRAM operations and that there is only one local point where the ReRAM effect occurs in a two-terminal device. Further investigation of the SET conditions in a graphene ReRAM suggests that the SET operation is driven by a potential difference within the ReRAM device. Finally, the time dependence of the SET operation is assessed, revealing that it occurs when the transient gate voltage is reduced abruptly from 10 to 0 V.</jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 53 (4S), 04EN02-, 2014-02-18
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847874819274752
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- NII論文ID
- 210000143687
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- データソース種別
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- Crossref
- CiNii Articles
- OpenAIRE
