First-principles study of defect formation in the photovoltaic semiconductors Cu<sub>2</sub>GeS<sub>3</sub>and Cu<sub>2</sub>ZnGeS<sub>4</sub>for comparison with Cu<sub>2</sub>SnS<sub>3</sub>, Cu<sub>2</sub>ZnSnS<sub>4</sub>, and CuInSe<sub>2</sub>
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収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 56 (4S), 04CS08-, 2017-03-10
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847874821159808
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- NII論文ID
- 210000147697
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- データソース種別
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- Crossref
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