Electrical Conduction at the Interface between Insulating van der Waals Materials

DOI Web Site Web Site Web Site 被引用文献2件 参考文献31件
  • Yuta Kashiwabara
    Quantum‐Phase Electronics Center and Department of Applied Physics the University of Tokyo 7‐3‐1 Hongo, Bunkyo‐ku Tokyo 113‐8656 Japan
  • Masaki Nakano
    Quantum‐Phase Electronics Center and Department of Applied Physics the University of Tokyo 7‐3‐1 Hongo, Bunkyo‐ku Tokyo 113‐8656 Japan
  • Yuji Nakagawa
    Quantum‐Phase Electronics Center and Department of Applied Physics the University of Tokyo 7‐3‐1 Hongo, Bunkyo‐ku Tokyo 113‐8656 Japan
  • Yue Wang
    Quantum‐Phase Electronics Center and Department of Applied Physics the University of Tokyo 7‐3‐1 Hongo, Bunkyo‐ku Tokyo 113‐8656 Japan
  • Hideki Matsuoka
    Quantum‐Phase Electronics Center and Department of Applied Physics the University of Tokyo 7‐3‐1 Hongo, Bunkyo‐ku Tokyo 113‐8656 Japan
  • Yoshihiro Iwasa
    Quantum‐Phase Electronics Center and Department of Applied Physics the University of Tokyo 7‐3‐1 Hongo, Bunkyo‐ku Tokyo 113‐8656 Japan

説明

<jats:title>Abstract</jats:title><jats:p>Emergent properties of 2D materials attract considerable interest in condensed matter physics and materials science due to their distinguished features that are missing in their bulk counterparts. A mainstream in this research field is to broaden the scope of material to expand the horizons of the research area, while developing functional interfaces between different 2D materials is another indispensable research direction. Here, the emergence of electrical conduction at the interface between insulating 2D materials is demonstrated. A new class of van der Waals heterostructures consisting of two sets of insulating transition‐metal dichalcogenides, group‐VI WSe<jats:sub>2</jats:sub> and group‐IV <jats:italic>TM</jats:italic>Se<jats:sub>2</jats:sub> (<jats:italic>TM</jats:italic> = Zr, Hf), is developed via molecular‐beam epitaxy, and it is found that those heterostructures are highly conducting although all the constituent materials are highly insulating. The WSe<jats:sub>2</jats:sub>/ZrSe<jats:sub>2</jats:sub> interface exhibits more conducting behavior than the WSe<jats:sub>2</jats:sub>/HfSe<jats:sub>2</jats:sub> interface, which can be understood by considering the band alignments between constituent materials. Moreover, by increasing Se flux during heterostructure fabrication, the WSe<jats:sub>2</jats:sub>/ZrSe<jats:sub>2</jats:sub> interface becomes more conducting, reaching nearly metallic behavior. Further improvement of the crystalline quality as well as exploring different material combinations are expected to lead to metallic conduction, providing a novel functionality emerging at van der Waals heterostructures.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (31)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

問題の指摘

ページトップへ