Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

Gandhi Kallarasan Periyanayagam, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Kazuhiko Shimomura

doi:10.1002/pssa.201700357

<jats:sec><jats:label /><jats:p>Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at room temperature was successfully achieved. Direct wafer bonding at 400 °C for the InP thin film and Si substrate is conducted prior to the growth process is adopted. After the bonding process, epitaxial layers are grown for the monolithic integration of InP optical devices on the wafer‐bonded InP/Si substrate. The surface after crystal growth is quite smooth and contains less voids. The photoluminescence (PL) intensity of GaInAsP on the InP/Si substrate is almost equivalent to the PL intensity of InP substrate as a reference. After forming a metallic contact at the n‐Si and p‐InP sides, the chips are cleaved and the current density‐light output (I‐L) characteristics are measured. The I‐L characteristics show that there is a difference in the threshold current density between the InP/Si substrate and InP substrate. The increase in the threshold current density is dependent on the measurement temperature, and that for the InP/Si substrate was as low as 4 kA cm<jats:sup>−2</jats:sup>.</jats:p></jats:sec>

Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate

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