Plasma interaction with Zn nano layer on organic materials for analysis of early stage of inorganic/organic hybrid multi-layer formation

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Abstract Interactions between Ar-O 2 mixture plasmas and Zn thin film on Tris(8-hydroxyquinolinato) aluminium (Alq 3 ) were investigated on the basis of nondestructive depth analyses of chemical bonding states at the Zn/Alq 3 interface via hard x-ray photoelectron spectroscopy (HXPES). The HXPES Zn 2p 3/2 spectrum measured at take-off angle (TOA) = 20° clearly shows significant increase of the Zn–O bond after Ar–O 2 mixture plasma exposure. This result indicated that the Ar–O 2 mixture plasma exposure has made it possible to form ZnO thin films on organic materials due to oxidation of Zn thin film. The HXPES C 1 s spectra measurement at TOA = 80° and 42° indicated that the Ar–O 2 mixture plasma exposure does not give significant damage to the chemical bonding states in regions up to about 20 nm from the Zn/Alq 3 interface. Whereas, the results of HXPES measurement at a TOA = 20° suggested that the oxygen radicals through the Zn thin film cause oxidation of Alq 3 at shallower region up to about a few nm from the interface.

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