High-Temperature Electrochemical Crystal Growth of Hollandite-Type Cs<sub><i>x</i></sub>Ti<sub>8</sub>O<sub>16</sub> with Controlled Electronic Properties

  • Yusuke Chiba
    Department of Materials and Life Chemistry, Faculty of Engineering, Kanagawa University, Yokohama, Kanagawa, 221-8686, Japan
  • Miwa Saito
    Department of Materials and Life Chemistry, Faculty of Engineering, Kanagawa University, Yokohama, Kanagawa, 221-8686, Japan
  • Takeshi Hagiwara
    Department of Materials and Life Chemistry, Faculty of Engineering, Kanagawa University, Yokohama, Kanagawa, 221-8686, Japan
  • Hiroshi Takatsu
    Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
  • Hiroshi Kageyama
    Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
  • Teruki Motohashi
    Department of Materials and Life Chemistry, Faculty of Engineering, Kanagawa University, Yokohama, Kanagawa, 221-8686, Japan

書誌事項

公開日
2017-10-20
資源種別
journal article
DOI
  • 10.1021/acs.cgd.7b00587
公開者
American Chemical Society (ACS)

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説明

Electrochemical crystal growth of hollandite-type CsxTi8O16 was examined employing high-temperature electrolysis of a molten mixture consisting of TiO2 and Cs2MoO4 with constant applied voltages. The resultant needle-like crystals showed obviously distinct appearances, either optical transparency or metallic luster, depending on the applied voltage. While the transparent crystals were electrical insulators, the metallic luster crystals were moderately conductive, with ρ–T curves being fitted with the one-dimensional (1D) VRH model, suggesting that the compound is a 1D metal involving carrier localization.

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