Temperature-dependent photocarrier recombination dynamics in Cu<sub>2</sub>ZnSnS<sub>4</sub> single crystals
書誌事項
- タイトル別名
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- Temperature-dependent photocarrier recombination dynamics in Cu[2]ZnSnS[4] single crystals
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説明
Time-resolved photoluminescence (PL) measurements have been used to study the temperature-dependent photocarrier recombination dynamics in Cu[2]ZnSnS[4] (CZTS) single crystals. We found a significant change of nearly four orders of magnitude of the PL decay time, from microseconds at low temperatures to subnanoseconds at room temperature. The slow PL decay at low temperatures indicates localization of the photocarriers at the band tails. Due to the large band tail states, the PL decay time depends strongly on both the photon energy and excitation density. It is pointed out that the drastically enhanced nonradiative recombination at high temperatures is one of the main factors that determine the power conversion efficiency of CZTS-based solar cells.
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 104 (8), 081907-, 2014-02-24
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1050282810757497984
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- NII論文ID
- 120005373209
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- NII書誌ID
- AA00543431
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- ISSN
- 00036951
- 10773118
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- HANDLE
- 2433/182185
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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